? semiconductor components industries, llc, 2001 april, 2001 rev. 4 1 publication order number: 2n6504/d 2n6504 series preferred device silicon controlled rectifiers reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ? glass passivated junctions with center gate fire for greater parameter uniformity and stability ? small, rugged, thermowatt constructed for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts ? 300 a surge current capability ? device marking: logo, device type, e.g., 2n6504, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit *peak repetitive offstate voltage (note 1.) (gate open, sine wave 50 to 60 hz, t j = 25 to 125 c) 2n6504 2n6505 2n6507 2N6508 2n6509 v drm, v rrm 50 100 400 600 800 volts on-state rms current (180 conduction angles; t c = 85 c) i t(rms) 25 a average on-state current (180 conduction angles; t c = 85 c) i t(av) 16 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 100 c) i tsm 250 a forward peak gate power (pulse width 1.0 m s, t c = 85 c) p gm 20 watts forward average gate power (t = 8.3 ms, t c = 85 c) p g(av) 0.5 watts forward peak gate current (pulse width 1.0 m s, t c = 85 c) i gm 2.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c *indicates jedec registered data 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 25 amperes rms 50 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 2n6504 to220ab 500/box 2n6505 to220ab 2n6507 to220ab http://onsemi.com 500/box 500/box k g a to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode 2N6508 to220ab 500/box 2n6509 to220ab 500/box marking diagram yy ww 650x x = 4, 5, 7, 8 or 9 yy = year ww = work week
2n6504 series http://onsemi.com 2 *thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 1.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics *peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm 10 2.0 m a ma on characteristics *forward onstate voltage (note 2.) (i tm = 50 a) v tm 1.8 volts *gate tri gger current (continuous dc) t c = 25 c (v ak = 12 vdc, r l = 100 ohms) t c = 40 c i gt 9.0 30 75 ma *gate tri gger v oltage (continuous dc) (v ak = 12 vdc, r l = 100 ohms, t c = 40 c) v gt 1.0 1.5 volts gate non-tri gger v oltage (v ak = 12 vdc, r l = 100 ohms, t j = 125 c) v gd 0.2 volts *holding current t c = 25 c (v ak = 12 vdc, initiating current = 200 ma, gate open) t c = 40 c i h 18 40 80 ma *turn-on time (i tm = 25 a, i gt = 50 madc) t gt 1.5 2.0 m s turn-off time (v drm = rated voltage) (i tm = 25 a, i r = 25 a) (i tm = 25 a, i r = 25 a, t j = 125 c) t q 15 35 m s dynamic characteristics critical rate of rise of off-state voltage (gate open, rated v drm , exponential waveform) dv/dt 50 v/ m s *indicates jedec registered data. 2. pulse test: pulse width 300 m s, duty cycle 2%.
2n6504 series http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) c t , maximum case temperature ( c) dc 180 16 12 0 80 90 10 0 110 13 0 60 a = 30 0 4.0 8.0 12 20 a = conduction angle i t(av) , onstate forward current (amps) a 90 p , average power (watts) (av) 180 90 24 0 8.0 16 32 t j = 125 c dc 60 a = 30 i t(av) , average onstate forward current (amps) 16 0 4.0 8.0 12 20 a = conduction angle a figure 1. average current derating figure 2. maximum onstate power dissipation
2n6504 series http://onsemi.com 4 1.0 0.02 0.03 0.05 0.07 0.1 100 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1.0 2.0 25 c 125 c 0.4 0.1 z q jc(t) = r q jc ? r(t) 1 cycle 1.0 200 surge is preceded and followed by rated current t c = 85 c f = 60 hz number of cycles 225 250 275 300 20 2.0 3.0 4.0 6.0 8.0 10 0.1 0 0.01 t, time (ms) 3.0 5.0 175 0.2 0.3 0.5 0.7 7.0 5.0 1.0 2.0 10 50 3.0 20 30 70 v f , instantaneous voltage (volts) 1.2 2.0 1.6 2.4 2.8 0.8 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 k 1.0 k i , peak surge current (amp) tsm r(t), transient thermal resistance (normalized) f i , instantaneous forward current (amps) figure 3. typical onstate characteristics figure 4. maximum nonrepetitive surge current figure 5. thermal response
2n6504 series http://onsemi.com 5 typical trigger characteristics figure 6. typical gate trigger current versus junction temperature figure 7. typical gate trigger voltage versus junction temperature figure 8. typical holding current versus junction temperature 10 1 100 125 110 80 65 50 35 5 -10 -25 20 t j , junction temperature ( c) i gt , gate trigger current (ma) -40 95 v gt 125 110 95 80 50 35 5 -40 0.8 -10 -25 20 t j , junction temperature ( c) 0.6 0.4 0.2 , gate trigger voltage (volts) 1.0 65 0.9 0.7 0.5 0.3 i , holding current (ma) h t j , junction temperature ( c) 100 10 1 125 110 95 80 50 35 5 -40 -10 -25 20 65
2n6504 series http://onsemi.com 6 package dimensions to220ab case 221a07 issue aa style 3: pin 1. cathode 2. anode 3. gate 4. anode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c
2n6504 series http://onsemi.com 7 notes
2n6504 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2n6504/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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